2014-10-02

Electromagnetic fields, Lorentz force effects and fast current surges in microelectronic protection devices

Dr. Wim Schoenmaker, Magwel NV (Leuven, Belgium)

1 Dec 2014, 16:15–17:45; Location: S2|17-103

Electrostatic discharge (ESD) is a serious design concern in microelectronic device fabrication and usage. Current spikes of the order of amperes active over a time lap of a nanosec need to be screened off from the core circuits by ESD protection devices. On-chip silicon controlled rectifiers are used for this purpose. The fast transient effect lead to appreciable induced magnetic fields and a detailed understanding of the temporal response requires that the induced magnetic fields are included. In this talk we will discuss the transient electromagnetic approach to semiconductor device engineering and for completeness also discuss a numerical implementation of the self-induced Lorentz force effects. Although the latter have a small impact on the final results, the computation of these effects is very demanding. In particular, the Newton-Raphson scheme shows peculiar convergence behavior which is not fully understood so far.

Category: CE Seminar

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