Simulation of microelectronic structures using potentialfieldsolving and optimal parameter setting methods

Wim Schoenmaker, CTO, MAGWEL N.V., Leuven (B)

5 Feb 2009, 16:00; Location: S2|17-103

The simulation of electromagnetic phenomena using field solvers for semiconductor structures demands the use of potentials and vector potentials because the local energy, more than the local force, determines the electron and hole distributions. The ideas underlying the finiteintegration method are applied to the potential fields leading to a discretization scheme that can be viewed as a unification of electromagnetic field (EM) solving with technology computer aided design (TCAD). In this presentation the unification into EMTCAD is reviewed and the newly created software representing this unification is applied to a series of typical design problems that are encountered in the microelectronic industry. Examples are: onchip inductors, onchip capacitors and interconnects, as well as multifinger RFCMOS devices and substratenoise isolation structures. It happens that the iterative process of finding matching simulation results and physcially acceptable technology parameters is a nontrivial task that can be supported extensively by using stateoftheart optimization tools and robustdesign facilities.

Category: CE Seminar


Technische Universität Darmstadt

Graduate School CE
Dolivostraße 15
D-64293 Darmstadt

Phone+49 6151/16-24401
Fax -24404

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